APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 1-9 these devices are sensitiv e to electrostatic discharge. proper ha nding procedures should be followe d. see application note apt0502 on www.microsemi.com q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 top switches : trench + field stop igbt ? bottom switches : fast npt igbt ? 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 trench & field stop ? igbt q1, q3: v ces = 1200v ; i c = 50a @ tc = 80c fast npt igbt q2, q4: v ces = 1200v ; i c = 50a @ tc = 80c application ? solar converter features ? q2, q4 (fast non punch through (npt) igbt) - switching frequency up to 50 khz - rbsoa & scsoa rated - low tail current ? q1, q3 (trench & field stop igbt ? ) - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full - bridge npt & trench + field stop ? igbt power module
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 2-9 all ratings @ t j = 25c unless otherwise specified 1. top switches 1.1 top trench + field stop igbt ? characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 270 w rbsoa reverse bias safe operating area t j = 125c 100a @ 1150v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3600 c rss reverse transfer capacitance v ge = 0v,v ce = 25v f = 1mhz 160 pf t d(on) turn-on delay time 90 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 70 ns t d(on) turn-on delay time 90 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 90 ns e on turn-on switching energy t j = 125c 5 e off turn-off switching energy v ge = 15v v bus = 600v i c = 50a r g = 18 ? t j = 125c 5.5 mj r thjc junction to case thermal resistance 0.45 c/w
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 3-9 1.2 top fast diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 60 a i f = 60a 2.5 3 i f = 120a 3 v f diode forward voltage i f = 60a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 560 q rr reverse recovery charge i f = 60a v r = 800v di/dt =200a/s t j = 125c 2890 nc r thjc junction to case thermal resistance 0.9 c/w 2. bottom switches 2.1 bottom fast npt igbt characteristics absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 4.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 1 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20 v, v ce = 0v 100 na symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 70 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 312 w rbsoa reverse bias safe operating area t j = 150c 100a @ 1200v
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 4-9 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3450 c oes output capacitance 330 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 220 pf q g total gate charge 330 q ge gate ? emitter charge 35 q gc gate ? collector charge v gs = 15v v bus = 600v i c = 50a 200 nc t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 320 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 5 ? 30 ns t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 360 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 5 ? 40 ns e on turn-on switching energy t j = 125c 6.9 e off turn-off switching energy v ge = 15v v bus = 600v i c = 50a r g = 5 ? t j = 125c 3.05 mj r thjc junction to case thermal resistance 0.4 c/w 2.2 bottom diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 2 2.5 i f = 60a 2.3 v f diode forward voltage i f = 30a t j = 125c 1.8 v t j = 25c 370 t rr reverse recovery time t j = 125c 500 ns t j = 25c 660 q rr reverse recovery charge i f = 30a v r = 800v di/dt =200a/s t j = 125c 3450 nc r thjc junction to case thermal resistance 1.2 c/w 3. temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 5-9 4. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 160 g tj=175c for trench & field stop igbt 5. sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com 6. top switches curves 6.1 top trench + field stop igbt ? typical performance curves output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 20 40 60 80 100 01234 v ce (v) i c (a) t j = 125c
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 6-9 transfert characteristics t j =25c t j =125c t j =125c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff 0 2 4 6 8 10 12 0 20406080100 i c (a) e (mj) v ce = 600v v ge = 15v r g = 18 ? t j = 125c eon eoff 0 2 4 6 8 10 12 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 20 40 60 80 100 120 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) 6.2 top fast diode typical performance curves t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 140 160 0.0 1.0 2.0 3.0 4.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 7-9 7. bottom switches curves 7.1 bottom fast npt igbt typical performance curves output characteristics (v ge =15v) t j =25c t j =125c 0 40 80 120 160 200 02468 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 10 20 30 40 50 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =25c t j =125c 0 50 100 150 200 250 300 0481216 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 gate charge (nc) v ge , gate to emitter voltage (v) i c = 50a t j = 25c ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) t j = 25c 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 8-9 v ge = 15v 25 30 35 40 45 0 25 50 75 100 125 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ce = 600v r g = 5 ? v ge =15v, t j =25c v ge =15v, t j =125c 200 250 300 350 400 0 25 50 75 100 125 i ce , collector to emitter current (a) turn-off delay time vs collector current td(off), turn-off delay time (ns ) v ce = 600v r g = 5 ? v ge =15v 20 60 100 140 180 0 25 50 75 100 125 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 5 ? t j = 25c t j = 125c 20 30 40 50 0 25 50 75 100 125 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 600v, v ge = 15v, r g = 5 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 4 8 12 16 20 24 28 0255075100125 i ce , collector to emitter current (a) turn-on energy loss vs collector current eon, turn-on energy loss (mj ) v ce = 600v r g = 5 ? t j = 25c t j = 125c 0 2 4 6 8 0 25 50 75 100 125 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 600v v ge = 15v r g = 5 ? eon, 50a eoff, 50a eon, 25a eoff, 25a 0 2 4 6 8 10 12 14 16 18 0 1020304050 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c 0 20 40 60 80 100 120 0 400 800 1200 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGV50H120T3G APTGV50H120T3G ? rev 0 june, 2007 www.microsemi.com 9-9 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration hard switching zcs zvs 0 20 40 60 80 100 120 10 20 30 40 50 60 i c , collector current (a) operating frequency vs collector current fmax, operating frequency (khz ) v ce = 600v d = 50% r g = 5 ? t j = 125c t c = 75c 7.2 bottom diode typical performance curves t j =-55c t j =25c t j =125c 0 20 40 60 80 0.01.02.03.04.0 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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